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v23990-p623-f24-pm preliminary datasheet fast pack 0 h 2nd gen 600v / 50a low inductive design clip-in pcb mounting distributed power generation welding v23990-p623-f24 parameter symbol value unit transistor h-bridge (igbt) collector-emitter break down voltage v ce 600 v t h =80c 43 t c =80c 50 repetitive peak collector current i cpuls tp limited by t j max 150 a t h =80c 79 t c =80c 120 gate-emitter peak voltage v ge 20 v maximum junction temperature t j max 175 c * it is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits diode h-bridge t h =80c 41 t c =80c 50 repetitive peak forward current i frm tp limited by t j max 150 a t h =80c 64 t c =80c 97 maximum junction temperature t j max 175 c types condition a a w w power dissipation per diode dc forward current i f p tot t j =t j max t j =t j max power dissipation per igbt p tot t j =t j max dc collector current i c t j =t j max maximum ratings features flow 0 housing target applications schematic s sc withstand time* t sc tj=125c v ge =15v v cc =360v 6 p623-f24 copyright by vincotech 1 revision: 2
v23990-p623-f24-pm preliminary datasheet parameter symbol value unit condition maximum ratings thermal properties storage temperature t stg -40+125 c operation temperature t op -40+125 c insulation properties insulation voltage v is t=1min 4000 vdc creepage distance min 12,7 mm min 12,7 mm clearance copyright by vincotech 2 revision: 2
v23990-p623-f24-pm preliminary datasheet parameter symbol unit v ge (v) or v gs (v) v r (v) or v ce (v) or v ds (v) i c (a) or i f (a) or i d (a) t(c) min typ max transistor h-bridge (igbt) tj=25c 4 5,8 7 tj=125c tj=25c 1,64 2,35 tj=125c 1,9 tj=25c 0,35 tj=125c tj=25c 650 tj=125c tj=25c - tj=125c tj=25c tj=125c 100 tj=25c tj=125c 15 tj=25c tj=125c 174 tj=25c tj=125c 96 tj=25c tj=125c 0,5 tj=25c tj=125c 1,37 tj=25c 3,14 tj=125c tj=25c 0,2 tj=125c tj=25c 0,09 tj=125c rgon=8 tj=25c rgoff=8 tj=125c 518 thermal resistance chip to heatsink per chip r thjh thermal grease thickness50um 1,2 k/w thermal resistance chip to case per chip r thjc = 0,61 w/mk k/w diode h-bridge tj=25c 1,68 2,3 tj=125c 1,7 tj=25c tj=125c 89 tj=25c tj=125c 133 tj=25c tj=125c 3,85 thermal resistance chip to heatsink per chip r thjh thermal grease thickness50um 1,48 k/w thermal resistance chip to case per chip r thjc = 0,61 w/mk k/w ntc thermistor rated resistance r 25 tj=25c 20,9 22 23,1 kohm deviation of r100 d r/r r100=1503 tc=100c 2,9 %/k power dissipation given epcos-type p tj=25c 210 mw b-value b (25/100) tol. 3% tj=25c 3980 k 300 50 integrated gate resistor r gint turn-on delay time t d(on) rise time t r turn-off delay time t d(off) v conditions ohm a ns c 300 50 di0/dt=4429 a/us diode forward voltage peak reverse recovery current reverse recovery time reverse recovery charge v f i rm t rr q rr 50 rgon=8 -15 15 value characteristic values gate emitter threshold voltage v ge(th) collector-emitter saturation voltage v ce(sat) collector-emitter cut-off i ces gate-emitter leakage current i ges fall time t f input capacitance c ies turn-on energy loss per pulse e on turn-off energy loss per pulse e off gate charge q gate output capacitance c oss reverse transfer capacitance c rss ns ns vge=vce 0 600 20 v v ma na nf nf ns ns mws mws nc rgoff=8 rgon=8 15 300 50 f=1mhz 0 25 nf 0 15 50 0,0008 copyright by vincotech 3 revision: 2
v23990-p623-f24-pm preliminary datasheet output inverter fi gure 1 . typical output characteristics fi gure 2 . typical output characteristics output inverter igb t output inverter igb t ic= f(v ce ) ic= f(v ce ) parameter: tp = 250 us tj = 25 c parameter: tp = 250 us tj = 125 c v ge parameter: from: 7 v to 17 v v ge parameter: from: 7 v to 17 v in 1 v steps in 1 v steps figure 3. typical transfer characteristics figure 4. typical diode forward current as output inverter igbt a function of forward voltage ic= f(v ge ) output inverter fred i f =f(v f ) parameter: tp = 250 us v ce = 10 v parameter: tp = 250 us 0 25 50 75 100 125 012345 v ce (v) ic (a) 0 25 50 75 100 125 012345 v ce (v) ic (a) 0 10 20 30 40 50 60 024681 01 2 v ge (v) i c (a) 125 oc 25 oc 0 25 50 75 100 125 0 0,5 1 1,5 2 2,5 3v f (v) i f (a) 25 oc 125 oc copyright by vincotech 4 revision: 2
v23990-p623-f24-pm preliminary datasheet output inverter figure 5. typical switching energy losses figure 6. typical switching energy losses as a function of collector current as a function of gate resistor output inverter igbt output inverter igbt e = f (ic) e = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v rgon= 8 ic = 50 a rgoff= 8 figure 7. typical switching times as a figure 8. typical switching times as a function of collector current function of gate resistor output inverter igbt output inverter igbt t = f (ic) t = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v rgon= 8 ic = 50 a rgoff= 8 e off e on erec 0 0,5 1 1,5 2 2,5 0 20406080100 i c (a) e (mws) e off e on erec 0 0,5 1 1,5 2 2,5 0 8 16 24 32 40 r g ( ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 20406080100 ic (a) t ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 8 16 24 32 40 r g ( ) t ( s) copyright by vincotech 5 revision: 2
v23990-p623-f24-pm preliminary datasheet output inverter figure 9. typical reverse recovery time as a figure 10. typical reverse recovery current as a function of igbt turn on gate resistor function of igbt turn on gate resistor output inverter fred diode output inverter fred diode t rr = f (rgon) i rrm = f (rgon) tj = 125 c tj = 125 c v r = 300 v v r = 300 v i f = 50 a i f = 50 a v ge = 15 v v ge = 15 v figure 11. typical reverse recovery charge as a figure 12. typical rate of fall of forward function of igbt turn on gate resistor and reverse recovery current as a output inverter fred diode function of igbt turn on gate resistor q rr = f (rgon) output inverter fred diode di0/dt,direc/dt = f (rgon) tj = 125 c tj = 125 c v r = 300 v v r = 300 v i f = 50 a i f = 50 a v ge = 15 v v ge = 15 v 0 0,05 0,1 0,15 0,2 0,25 0,3 0 8 16 24 32 40 r gon ( ) t rr ( s) 0 25 50 75 100 125 0 8 16 24 32 40 r gon ( ) irr m (a) 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 0 8 16 24 32 40 r gon ( ) q rr ( c) di0/dt direc/dt 0 600 1200 1800 2400 3000 3600 4200 4800 5400 6000 6600 0 8 16 24 32 40 r gon ( ) di rec / dt (a/ s) copyright by vincotech 6 revision: 2
v23990-p623-f24-pm preliminary datasheet output inverter figure 13. igbt transient thermal impedance figure 14. fred transient thermal impedance as a function of pulse width as a function of pulse width z th jh = f(tp) z th jh = f(tp) parameter: d = tp / t rthjh= 1,20 k/w parameter: d = tp / t rthjh= 1,48 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,07 3,9e+00 0,08 2,9e+00 0,21 5,8e-01 0,26 3,7e-01 0,54 1,3e-01 0,62 8,7e-02 0,25 2,1e-02 0,33 1,5e-02 0,07 3,5e-03 0,09 2,5e-03 0,06 3,5e-04 0,10 2,8e-04 0,00 0,0e+00 0,00 0,0e+00 0,00 0,0e+00 0,00 0,0e+00 0,00 0,0e+00 0,00 0,0e+00 0,00 0,0e+00 0,00 0,0e+00 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright by vincotech 7 revision: 2
v23990-p623-f24-pm preliminary datasheet output inverter fi gure 15 . power dissipation as a fi gure 16 . collector current as a function of heatsink temperature function of heatsink temperature output inverter igbt output inverter igbt p tot = f (th) i c = f (th) parameter: tj= 175 oc parameter: tj= 175 oc v ge = 15 v figure 17. power dissipation as a figure 18. forward current as a function of heatsink temperature function of heatsink temperature output inverter fred output inverter fred p tot = f (th) i f = f (th) parameter: tj= 175 oc parameter: tj= 175 oc 0 25 50 75 100 125 150 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i c (a) 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i f (a) copyright by vincotech 8 revision: 2
v23990-p623-f24-pm preliminary datasheet thermistor figure 1. typical ntc characteristic as afunction of temperature r t = f (t) ntc-typical temperature characteristic 0 5000 10000 15000 20000 25000 25 50 75 100 125 t (c) r/ copyright by vincotech 9 revision: 2
v23990-p623-f24-pm preliminary datasheet switching definitions general conditions: tj= 125 c rgon= 8 rgoff= 8 figure 1. turn-off switching waveforms & figure 2. turn-on switching waveforms & definition of tdoff, t eoff definition of t don , t eon (t eoff = integrating time for e off )( t eon = integrating time for e on ) output inverter igbt output inverter igbt uge(0%)= -15 v uge(0%)= -15 v uge(100%)= 15 v uge(100%)= 15 v uc(100%)= 300 v uc(100%)= 300 v ic(100%)= 50 a ic(100%)= 50 a tdoff= 0,17 us tdon= 0,10 us t eoff = 0,38 us t eon = 0,21 us figure 3. turn-off switching waveforms & figure 4. turn-on switching waveforms & definition of t f definition of t r output inverter igbt output inverter igbt uc(100%)= 300 v uc(100%)= 300 v ic(100%)= 50 a ic(100%)= 50 a t f = 0,096 us t r = 0,015 us ic 1% uce 90% uge 90% -40 -20 0 20 40 60 80 100 120 140 -0,3 -0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 time (us) % tdoff teoff uce ic uge ic10% uge10% tdon uce3% -40 0 40 80 120 160 200 240 280 320 2,6 2,7 2,8 2,9 3 3,1 3,2 3,3 time(us) % ic uce t eon uge fitted ic10% ic 90% ic 60% ic 40% -20 0 20 40 60 80 100 120 140 0 0,05 0,1 0,15 0,2 0,25 0,3 0,35 0,4 time (us) % uce ic tf ic10% ic90% -20 20 60 100 140 180 220 260 300 2,85 2,9 2,95 3 3,05 3,1 3,15 time(us) % tr uce ic copyright by vincotech 10 revision: 2
v23990-p623-f24-pm preliminary datasheet switching definitions figure 5. turn-off switching waveforms & figure 6. turn-on switching waveforms & definition of t eoff definition of t eon output inverter igbt output inverter igbt poff(100%)= 14,89 kw pon(100%)= 14,9 kw eoff(100%)= 1,38 mj eon(100%)= 0,50 mj t eoff = 0,38 us t eon = 0,21 us figure 7. gate voltage vs gate charge figure 8. turn-off switching waveforms & output inverter igbt definition of t rr output inverter fred ugeoff= -15 v ugeon= 15 v ud(100%)= 300 v uc(100%)= 300 v id(100%)= 50 a ic(100%)= 50 a i rrm (100%)= 89 a qg= 509,8 nc trr= 0,13 us ic 1% uge90% -20 0 20 40 60 80 100 120 -0,3 -0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 time (us) % poff eoff teoff uce3% uge10% -20 0 20 40 60 80 100 120 140 2,6 2,7 2,8 2,9 3 3,1 3,2 3,3 time(us) % pon eon teon -20 -15 -10 -5 0 5 10 15 20 -100 0 100 200 300 400 500 600 qg (nc) uge (v) i rrm 10% i rrm 90% i rrm 100% trr -200 -160 -120 -80 -40 0 40 80 120 2,8 2,85 2,9 2,95 3 3,05 3,1 3,15 3,2 3,25 3,3 time(us) % id ud fitted copyright by vincotech 11 revision: 2
v23990-p623-f24-pm preliminary datasheet switching definitions figure 9. turn-on switching waveforms & figure 10. turn-on switching waveforms & definition of t qrr definition of t erec (tqrr= integrating time for qrr) (t erec = integrating time for e rec ) output inverter fred output inverter fred id(100%)= 50 a prec(100%)= 14,9 kw qrr(100%)= 3,85 uc erec(100%)= 0,94 mj tqint= 0,30 us terec= 0,30 us tqint -200 -150 -100 -50 0 50 100 150 2,6 2,8 3 3,2 3,4 3,6 time(us) % id q rr -20 10 40 70 100 130 160 190 2,6 2,8 3 3,2 3,4 3,6 time(us) % p rec erec te rec copyright by vincotech 12 revision: 2
v23990-p623-f24-pm preliminary datasheet package outline and pinout outline pinout copyright by vincotech 13 revision: 2
v23990-p623-f24-pm preliminary datasheet product status definition s formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. tyco electronics reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. tyco electronics reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. tyco electronics reserves the right to make changes without further notice to any products herein to improve reliability, function or design. tyco electronics does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. tyco electronics products are not authorised for use as critical components in life support devices or systems without the express written approval of tyco electronics 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by vincotech 14 revision: 2

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